According to Stratistics MRC, the Global IGBT & Thyristor Market is accounted for $5.30 billion in 2020 and is expected to reach $8.84 billion by 2028 growing at a CAGR of 6.6% during the forecast period. Demand for the replacement of aging power infrastructure, increasing adoption of electric motors and increasing adoption of renewable energy sources are driving the market growth. However, high infrastructure development cost and lack of technology awareness are hampering the growth of the market.
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By geography, North America is going to have high growth during the forecast period due to the growth attributed to the replacement of aging power infrastructure, particularly in developed economies such as US and the deployment of smart grids in the region increases the market growth.
Some of the key players profiled in the IGBT & Thyristor Market include Infineon Technologies AG, Fuji Electric Co., Ltd., Mitsubishi Electric Corporation, ABB Ltd, Toshiba Corporation, Siemens AG, Schneider Electric, Littelfuse, Inc., ON Semiconductor, STMicroelectronics and Hitachi, Ltd.
Power Ratings Covered:
• Low
• Medium
• High
Packaging Types Covered:
• Insulated Gate Bipolar Transistor (IGBT) Module
• Insulated Gate Bipolar Transistor (IGBT) Discrete
Voltages Covered:
• <400 V
• 600–650 V
• 1,200–1,700 V
• 2,500–3,300 V
• >4,500 V
Classes of Thyristors Covered:
• Thyristors with Bidirectional Control
• Thyristors with Turn-On Capabilities
• Thyristors with Turn-Off Capabilities
Applications Covered:
• Thyristor
• Snubber circuits
• Insulated Gate Bipolar Transistor (IGBT)
Regions Covered:
• North America
o US
o Canada
o Mexico
• Europe
o Germany
o UK
o Italy
o France
o Spain
o Rest of Europe
• Asia Pacific
o Japan
o China
o India
o Australia
o New Zealand
o South Korea
o Rest of Asia Pacific
• South America
o Argentina
o Brazil
o Chile
o Rest of South America
• Middle East & Africa
o Saudi Arabia
o UAE
o Qatar
o South Africa
o Rest of Middle East & Africa
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